smd type 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3479 features super low on-state resistance: r ds(on)1 =11m max. (v gs =10v,i d =42a) r ds(on)2 =13m max. (v gs =4.5v,i d =42a) low c iss: c iss = 11000 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v i d 83 a i dp * 332 a power dissipation t c =25 125 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =100v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =10v,i d =42a 37 74 s r ds(on)1 v gs =10v,i d =42a 8.8 11 m r ds(on)2 v gs =4.5v,i d =42a 10 13 m input capacitance c iss 11000 pf output capacitance c oss 1100 pf reverse transfer capacitance c rss 540 pf turn-on delay time t on 27 ns rise time t r 18 ns turn-off delay time t off 140 ns fall time tf 13 ns total gate charge q g 210 nc gate to source charge q gs 26 nc gate to drain charge q gd 60 nc v ds =10v,v gs =0,f=1mhz i d =42a,v gs(on) =10v,r g =0 ,v dd =50v i d =83a, v dd =80v, v gs =10v draintosourceon-stateresistance 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type product specification
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